Part Number :
SI1967DH-T1-GE3
Manufacturer :
Vishay / Siliconix
Description :
SI1967DH-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
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More Information :
SI1967DH-T1-GE3 More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.42
Remark :
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount :
Surface Mount
Weight :
28.009329 mg
Rise Time :
27 ns
Resistance :
490 MΩ
Case/Package :
SOT-363
Input Capacitance :
110 pF
Threshold Voltage :
-1 V
Number of Elements :
2
Turn-Off Delay Time :
12 ns
Max Power Dissipation :
1.25 W
Min Operating Temperature :
-55 °C
Gate to Source Voltage (Vgs) :
8 V
Max Junction Temperature (Tj) :
150 °C
Drain to Source Breakdown Voltage :
-20 V
Products Category :
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty :
889 In Stock
Applications :
Test & measurement
Tablets
Aerospace & defense
Height :
1.1 mm
Fall Time :
10 ns
Rds On Max :
490 mΩ
Schedule B :
8541210080
Number of Pins :
6
Power Dissipation :
740 mW
Number of Channels :
2
Turn-On Delay Time :
2 ns
Element Configuration :
Dual
Max Operating Temperature :
150 °C
Drain to Source Resistance :
390 mΩ
Continuous Drain Current (ID) :
-1 A
Drain to Source Voltage (Vdss) :
-20 V
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