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Part Number : BFP640FESDH6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFP640FESDH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFP640FESDH6327XTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.61
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 30.5 dB
Polarity : NPN
Power Gain : 26.5 dB
Noise Figure : 0.55 dB
Contact Plating : Tin
Power Dissipation : 200 mW
Transition Frequency : 46 GHz
Max Power Dissipation : 200 mW
Min Operating Temperature : -55 °C
Collector Emitter Voltage (VCEO) : 4.1 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 7731 In Stock
Applications : Aerospace & defense Connected peripherals & printers Portable electronics
Mount : Surface Mount
Packaging : Tape & Reel
Case/Package : SMD/SMT
Number of Pins : 4
Package Quantity : 3000
Number of Elements : 1
Max Collector Current : 50 mA
Max Operating Temperature : 150 °C
Collector Base Voltage (VCBO) : 4.8 V
Collector Emitter Breakdown Voltage : 4.7 V
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