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Part Number : BFP842ESDH6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFP842ESDH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFP842ESDH6327XTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.51
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 26 dB
Polarity : NPN
Packaging : Tape & Reel
Case/Package : SOT-343
Number of Pins : 4
Package Quantity : 3000
Max Breakdown Voltage : 3.7 V
Max Power Dissipation : 120 mW
Min Operating Temperature : -55 °C
Continuous Collector Current : 40 mA
Collector Emitter Voltage (VCEO) : 3.25 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 7578 In Stock
Applications : Infotainment & cluster Wireless infrastructure PC & notebooks
Mount : Surface Mount
Frequency : 60 GHz
Power Gain : 23.5 dB
Noise Figure : 0.4 dB
Contact Plating : Tin
Transition Frequency : 60 GHz
Max Collector Current : 40 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 4.1 V
Collector Base Voltage (VCBO) : 4.1 V
Collector Emitter Breakdown Voltage : 3.7 V
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