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Part Number : BFR840L3RHESDE6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFR840L3RHESDE6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFR840L3RHESDE6327XTSA1 More Information
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Pricing(USD) : $0.71
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 27 dB
Polarity : NPN
Packaging : Tape & Reel
Noise Figure : 0.5 dB
Contact Plating : Gold
Transition Frequency : 75 GHz
Max Breakdown Voltage : 2.6 V
Max Power Dissipation : 75 mW
Min Operating Temperature : -55 °C
Continuous Collector Current : 35 mA
Collector Emitter Voltage (VCEO) : 2.25 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 4494 In Stock
Applications : Wearables (non-medical)
Mount : Surface Mount
Frequency : 75 GHz
Power Gain : 26.5 dB
Number of Pins : 3
Package Quantity : 15000
Element Configuration : Single
Max Collector Current : 35 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 2.9 V
Collector Base Voltage (VCBO) : 2.9 V
Collector Emitter Breakdown Voltage : 2.6 V
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