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Part Number : BFG410W,115
Manufacturer : Rochester Electronics
Description : BFG410W,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Rochester Electronics stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFG410W,115 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.09
Remark : Manufacturer: Rochester Electronics. Rozee is one of the Distributors. Wide range of applications.
Gain : 21 dB
Width : 1.35 mm
Length : 2.2 mm
Frequency : 22 GHz
Output Power : 54 mW
Number of Pins : 4
Power Dissipation : 54 mW
Transition Frequency : 22 GHz
Max Breakdown Voltage : 4.5 V
Max Power Dissipation : 54 mW
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 1 V
Collector Base Voltage (VCBO) : 10 V
Collector Emitter Breakdown Voltage : 4.5 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 5685 In Stock
Applications : Lighting Appliances Aerospace & defense
Mount : Surface Mount
Height : 1 mm
Polarity : NPN
Case/Package : SOT-343
Max Frequency : 22 GHz
Contact Plating : Tin
Number of Elements : 1
Element Configuration : Single
Max Collector Current : 12 mA
Gain Bandwidth Product : 22 GHz
Min Operating Temperature : -65 °C
Continuous Collector Current : 12 mA
Collector Emitter Voltage (VCEO) : 4.5 V
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